Fayçal DJEFFAL, Zerroumda B, Toufik B, Hichem F.
Numerical Analysis of 4H-SiC MOSFET Design Including High-k Gate Dielectrics for Power electronic Applications. ICSENT 2018: Proceedings of the 7th International Conference on Software Engineering and New Technologies [Internet]. 2018.
Publisher's VersionAbstract
In this paper, we present a comprehensive investigation the impact of various high-k gate materials on both breakdown voltage and drain current of a vertical 4H-SiC-based power MOSFET, operating in the quasi-saturation regime. The device electrical behavior is numerically investigated using a TCAD-based computation provided by ATLAS 2D simulator. Moreover, the performance parameters, governing the power MOSFET breakdown characteristics are extracted in order to reveal the role of the high-k gate materials in improving the transistor electrical performance. The effect of the dielectric permittivity on the derived current capability in also analyzed. After, we conduct a sensitivity analysis of the breakdown voltage with several high-k materials (Al2O3, HfSiO4, HfO2, and TiO2) and different dielectric thicknesses. It is found that the proposed power MOSFET design exhibits improved electrical behavior not only enables enhancing the drain current but also allows achieving superior breakdown performance as compared to the conventional design, making it suitable for high-performance power electronic applications.
Fayçal DJEFFAL, Zerroumda B, Toufik B, Hichem F.
Numerical Analysis of 4H-SiC MOSFET Design Including High-k Gate Dielectrics for Power electronic Applications. ICSENT 2018: Proceedings of the 7th International Conference on Software Engineering and New Technologies [Internet]. 2018.
Publisher's VersionAbstract
In this paper, we present a comprehensive investigation the impact of various high-k gate materials on both breakdown voltage and drain current of a vertical 4H-SiC-based power MOSFET, operating in the quasi-saturation regime. The device electrical behavior is numerically investigated using a TCAD-based computation provided by ATLAS 2D simulator. Moreover, the performance parameters, governing the power MOSFET breakdown characteristics are extracted in order to reveal the role of the high-k gate materials in improving the transistor electrical performance. The effect of the dielectric permittivity on the derived current capability in also analyzed. After, we conduct a sensitivity analysis of the breakdown voltage with several high-k materials (Al2O3, HfSiO4, HfO2, and TiO2) and different dielectric thicknesses. It is found that the proposed power MOSFET design exhibits improved electrical behavior not only enables enhancing the drain current but also allows achieving superior breakdown performance as compared to the conventional design, making it suitable for high-performance power electronic applications.
Fayçal DJEFFAL, Zerroumda B, Toufik B, Hichem F.
Numerical Analysis of 4H-SiC MOSFET Design Including High-k Gate Dielectrics for Power electronic Applications. ICSENT 2018: Proceedings of the 7th International Conference on Software Engineering and New Technologies [Internet]. 2018.
Publisher's VersionAbstract
In this paper, we present a comprehensive investigation the impact of various high-k gate materials on both breakdown voltage and drain current of a vertical 4H-SiC-based power MOSFET, operating in the quasi-saturation regime. The device electrical behavior is numerically investigated using a TCAD-based computation provided by ATLAS 2D simulator. Moreover, the performance parameters, governing the power MOSFET breakdown characteristics are extracted in order to reveal the role of the high-k gate materials in improving the transistor electrical performance. The effect of the dielectric permittivity on the derived current capability in also analyzed. After, we conduct a sensitivity analysis of the breakdown voltage with several high-k materials (Al2O3, HfSiO4, HfO2, and TiO2) and different dielectric thicknesses. It is found that the proposed power MOSFET design exhibits improved electrical behavior not only enables enhancing the drain current but also allows achieving superior breakdown performance as compared to the conventional design, making it suitable for high-performance power electronic applications.
Benmoussa F, Ouzani R, Benzaoui A, Moussa HB.
Numerical analysis of concentric double pipe latent thermal energy storage unit using two phase change materials for solar water heating applications. Computational Thermal Sciences: An International JournalComputational Thermal Sciences: An International Journal. 2018;10.
Benmoussa F, Ouzani R, Benzaoui A, Moussa HB.
Numerical analysis of concentric double pipe latent thermal energy storage unit using two phase change materials for solar water heating applications. Computational Thermal Sciences: An International JournalComputational Thermal Sciences: An International Journal. 2018;10.
Benmoussa F, Ouzani R, Benzaoui A, Moussa HB.
Numerical analysis of concentric double pipe latent thermal energy storage unit using two phase change materials for solar water heating applications. Computational Thermal Sciences: An International JournalComputational Thermal Sciences: An International Journal. 2018;10.
Benmoussa F, Ouzani R, Benzaoui A, Moussa HB.
Numerical analysis of concentric double pipe latent thermal energy storage unit using two phase change materials for solar water heating applications. Computational Thermal Sciences: An International JournalComputational Thermal Sciences: An International Journal. 2018;10.
Bouatia M, Demagh R.
Numerical Assessment of Slope Stability of Ain-Tinn Mila Province (Algeria). International Congress and Exhibition" Sustainable Civil Infrastructures: Innovative Infrastructure Geotechnology". 2018 :133-143.
Bouatia M, Demagh R.
Numerical Assessment of Slope Stability of Ain-Tinn Mila Province (Algeria). International Congress and Exhibition" Sustainable Civil Infrastructures: Innovative Infrastructure Geotechnology". 2018 :133-143.
BITAM ELW, DEMAGH Y, HACHICHA A, BENMOUSSA H, KABAR Y.
Numerical investigation of a novel sinusoidal tube receiver for parabolic trough technology. applied energyApplied Energy. 2018;218 :494–510.
BITAM ELW, DEMAGH Y, HACHICHA A, BENMOUSSA H, KABAR Y.
Numerical investigation of a novel sinusoidal tube receiver for parabolic trough technology. applied energyApplied Energy. 2018;218 :494–510.
BITAM ELW, DEMAGH Y, HACHICHA A, BENMOUSSA H, KABAR Y.
Numerical investigation of a novel sinusoidal tube receiver for parabolic trough technology. applied energyApplied Energy. 2018;218 :494–510.
BITAM ELW, DEMAGH Y, HACHICHA A, BENMOUSSA H, KABAR Y.
Numerical investigation of a novel sinusoidal tube receiver for parabolic trough technology. applied energyApplied Energy. 2018;218 :494–510.
BITAM ELW, DEMAGH Y, HACHICHA A, BENMOUSSA H, KABAR Y.
Numerical investigation of a novel sinusoidal tube receiver for parabolic trough technology. applied energyApplied Energy. 2018;218 :494–510.
AZOUI H, SOLTANI N, BAHLOUL D.
Numerical investigation of three-dimensional heat transfer and natural convection in the sapphire melt for Czochralski growth process. Journal of New Technology and Materials (JNTM) J. New Technol. Mater.Journal of New Technology and Materials (JNTM) J. New Technol. Mater. 2018;Vol. 08 :48-57.
AZOUI H, SOLTANI N, BAHLOUL D.
Numerical investigation of three-dimensional heat transfer and natural convection in the sapphire melt for Czochralski growth process. Journal of New Technology and Materials (JNTM) J. New Technol. Mater.Journal of New Technology and Materials (JNTM) J. New Technol. Mater. 2018;Vol. 08 :48-57.
AZOUI H, SOLTANI N, BAHLOUL D.
Numerical investigation of three-dimensional heat transfer and natural convection in the sapphire melt for Czochralski growth process. Journal of New Technology and Materials (JNTM) J. New Technol. Mater.Journal of New Technology and Materials (JNTM) J. New Technol. Mater. 2018;Vol. 08 :48-57.