In this paper, a new radiation sensitive field-effect Transistor (RADFET) dosimeter design based on armchair-edge graphene nanoribbon (AGNR), for high performance low-dose monitoring applications, is proposed through a quantum simulation study. The simulation approach used to investigate the proposed nanoscale RADFET is based on solving the Schrödinger equation using the mode space (MS) non-equilibrium Green’s function (NEGF) formalism coupled self-consistently with a two dimensional (2D) Poisson equation under the ballistic limits. The responsiveness of the proposed RADFET to the modulation of radiation-induced trapped charge densities is reflected via the threshold voltage, which is considered as a sensing parameter. The dosimeter behavior is investigated, and the impact of variation in physical and geometrical parameters on the dosimeter sensitivity is also studied. In comparison to other RADFETs designs, the proposed radiation sensor provides higher sensitivity and better scalability, which are the main requirements for futuristic dosimeters. The obtained results make the suggested RADFET dosimeter as a viable and attractive replacement to silicon-based MOS dosimeters.

In this paper, we present a comprehensive investigation the impact of various high-k gate materials on both breakdown voltage and drain current of a vertical 4H-SiC-based power MOSFET, operating in the quasi-saturation regime. The device electrical behavior is numerically investigated using a TCAD-based computation provided by ATLAS 2D simulator. Moreover, the performance parameters, governing the power MOSFET breakdown characteristics are extracted in order to reveal the role of the high-k gate materials in improving the transistor electrical performance. The effect of the dielectric permittivity on the derived current capability in also analyzed. After, we conduct a sensitivity analysis of the breakdown voltage with several high-k materials (Al2O3, HfSiO4, HfO2, and TiO2) and different dielectric thicknesses. It is found that the proposed power MOSFET design exhibits improved electrical behavior not only enables enhancing the drain current but also allows achieving superior breakdown performance as compared to the conventional design, making it suitable for high-performance power electronic applications.

In this paper, we present a comprehensive investigation the impact of various high-k gate materials on both breakdown voltage and drain current of a vertical 4H-SiC-based power MOSFET, operating in the quasi-saturation regime. The device electrical behavior is numerically investigated using a TCAD-based computation provided by ATLAS 2D simulator. Moreover, the performance parameters, governing the power MOSFET breakdown characteristics are extracted in order to reveal the role of the high-k gate materials in improving the transistor electrical performance. The effect of the dielectric permittivity on the derived current capability in also analyzed. After, we conduct a sensitivity analysis of the breakdown voltage with several high-k materials (Al2O3, HfSiO4, HfO2, and TiO2) and different dielectric thicknesses. It is found that the proposed power MOSFET design exhibits improved electrical behavior not only enables enhancing the drain current but also allows achieving superior breakdown performance as compared to the conventional design, making it suitable for high-performance power electronic applications.

In this paper, we present a comprehensive investigation the impact of various high-k gate materials on both breakdown voltage and drain current of a vertical 4H-SiC-based power MOSFET, operating in the quasi-saturation regime. The device electrical behavior is numerically investigated using a TCAD-based computation provided by ATLAS 2D simulator. Moreover, the performance parameters, governing the power MOSFET breakdown characteristics are extracted in order to reveal the role of the high-k gate materials in improving the transistor electrical performance. The effect of the dielectric permittivity on the derived current capability in also analyzed. After, we conduct a sensitivity analysis of the breakdown voltage with several high-k materials (Al2O3, HfSiO4, HfO2, and TiO2) and different dielectric thicknesses. It is found that the proposed power MOSFET design exhibits improved electrical behavior not only enables enhancing the drain current but also allows achieving superior breakdown performance as compared to the conventional design, making it suitable for high-performance power electronic applications.

In this paper, we present a comprehensive investigation the impact of various high-k gate materials on both breakdown voltage and drain current of a vertical 4H-SiC-based power MOSFET, operating in the quasi-saturation regime. The device electrical behavior is numerically investigated using a TCAD-based computation provided by ATLAS 2D simulator. Moreover, the performance parameters, governing the power MOSFET breakdown characteristics are extracted in order to reveal the role of the high-k gate materials in improving the transistor electrical performance. The effect of the dielectric permittivity on the derived current capability in also analyzed. After, we conduct a sensitivity analysis of the breakdown voltage with several high-k materials (Al2O3, HfSiO4, HfO2, and TiO2) and different dielectric thicknesses. It is found that the proposed power MOSFET design exhibits improved electrical behavior not only enables enhancing the drain current but also allows achieving superior breakdown performance as compared to the conventional design, making it suitable for high-performance power electronic applications.