HOME / PUBLICATIONS /

Publications

2018
Hichem F, Fayçal DJEFFAL. Reliability Investigation of Nanoscale Junctionless GAA MOSFET Against Degradation-Related Ageing Effects, Journal of Nanoelectronics and Optoelectronics, ISSN / e-ISSN 1555-130X / 1555-1318. Journal of Nanoelectronics and OptoelectronicsJournal of Nanoelectronics and Optoelectronics. 2018;Volume 13 :pp 1106-1113.Abstract
In this work, we present a comprehensive investigation of JL-GAA MOSFET including degradation-related ageing effects to study the nanoscale JL-GAA MOSFET reliability against the ageing phenomenon. A quantitative analysis of the device reliability behavior is carried out, in order to show the impact of the ageing effects on the device performance for digital applications. Moreover, the effect of the stress time on the device subthreshold behavior including the threshold voltage, DIBL and swing factor is elucidated, where the degradation related-ageing effects is represented by a new current generator in the opposite direction that describes the exponential degradation of the current as function of the stress time. Further, the role of introducing a high-k layer on the gate oxide in improving the JL-GAA MOSFET immunity against the degradation-related ageing effects is analyzed, where the proposed structure exhibits an excellent immunity against the ageing effects. In order to show the impact of the proposed approach on the nanoelectronic circuits designing, the developed model has been implemented to study the performance behavior of voltage amplifier circuit including degradation-related ageing effects. Therefore, the proposed approach can offer new insights regarding the investigation and simulation of the nanoelectronic circuits including the degradation-related ageing effects.
Hichem F, Fayçal DJEFFAL. Reliability Investigation of Nanoscale Junctionless GAA MOSFET Against Degradation-Related Ageing Effects, Journal of Nanoelectronics and Optoelectronics, ISSN / e-ISSN 1555-130X / 1555-1318. Journal of Nanoelectronics and OptoelectronicsJournal of Nanoelectronics and Optoelectronics. 2018;Volume 13 :pp 1106-1113.Abstract
In this work, we present a comprehensive investigation of JL-GAA MOSFET including degradation-related ageing effects to study the nanoscale JL-GAA MOSFET reliability against the ageing phenomenon. A quantitative analysis of the device reliability behavior is carried out, in order to show the impact of the ageing effects on the device performance for digital applications. Moreover, the effect of the stress time on the device subthreshold behavior including the threshold voltage, DIBL and swing factor is elucidated, where the degradation related-ageing effects is represented by a new current generator in the opposite direction that describes the exponential degradation of the current as function of the stress time. Further, the role of introducing a high-k layer on the gate oxide in improving the JL-GAA MOSFET immunity against the degradation-related ageing effects is analyzed, where the proposed structure exhibits an excellent immunity against the ageing effects. In order to show the impact of the proposed approach on the nanoelectronic circuits designing, the developed model has been implemented to study the performance behavior of voltage amplifier circuit including degradation-related ageing effects. Therefore, the proposed approach can offer new insights regarding the investigation and simulation of the nanoelectronic circuits including the degradation-related ageing effects.
Mouni L, Belkhiri L, Bollinger J-C, Bouzaza A, Assadi A, Tirri A, Dahmoune F, Madani K, Remini H. Removal of Methylene Blue from aqueous solutions by adsorption on Kaolin: Kinetic and equilibrium studies. Applied Clay ScienceApplied Clay Science. 2018;153 :38-45.
Mouni L, Belkhiri L, Bollinger J-C, Bouzaza A, Assadi A, Tirri A, Dahmoune F, Madani K, Remini H. Removal of Methylene Blue from aqueous solutions by adsorption on Kaolin: Kinetic and equilibrium studies. Applied Clay ScienceApplied Clay Science. 2018;153 :38-45.
Mouni L, Belkhiri L, Bollinger J-C, Bouzaza A, Assadi A, Tirri A, Dahmoune F, Madani K, Remini H. Removal of Methylene Blue from aqueous solutions by adsorption on Kaolin: Kinetic and equilibrium studies. Applied Clay ScienceApplied Clay Science. 2018;153 :38-45.
Mouni L, Belkhiri L, Bollinger J-C, Bouzaza A, Assadi A, Tirri A, Dahmoune F, Madani K, Remini H. Removal of Methylene Blue from aqueous solutions by adsorption on Kaolin: Kinetic and equilibrium studies. Applied Clay ScienceApplied Clay Science. 2018;153 :38-45.
Mouni L, Belkhiri L, Bollinger J-C, Bouzaza A, Assadi A, Tirri A, Dahmoune F, Madani K, Remini H. Removal of Methylene Blue from aqueous solutions by adsorption on Kaolin: Kinetic and equilibrium studies. Applied Clay ScienceApplied Clay Science. 2018;153 :38-45.
Mouni L, Belkhiri L, Bollinger J-C, Bouzaza A, Assadi A, Tirri A, Dahmoune F, Madani K, Remini H. Removal of Methylene Blue from aqueous solutions by adsorption on Kaolin: Kinetic and equilibrium studies. Applied Clay ScienceApplied Clay Science. 2018;153 :38-45.
Mouni L, Belkhiri L, Bollinger J-C, Bouzaza A, Assadi A, Tirri A, Dahmoune F, Madani K, Remini H. Removal of Methylene Blue from aqueous solutions by adsorption on Kaolin: Kinetic and equilibrium studies. Applied Clay ScienceApplied Clay Science. 2018;153 :38-45.
Mouni L, Belkhiri L, Bollinger J-C, Bouzaza A, Assadi A, Tirri A, Dahmoune F, Madani K, Remini H. Removal of Methylene Blue from aqueous solutions by adsorption on Kaolin: Kinetic and equilibrium studies. Applied Clay ScienceApplied Clay Science. 2018;153 :38-45.
Mouni L, Belkhiri L, Bollinger J-C, Bouzaza A, Assadi A, Tirri A, Dahmoune F, Madani K, Remini H. Removal of Methylene Blue from aqueous solutions by adsorption on Kaolin: Kinetic and equilibrium studies. Applied Clay ScienceApplied Clay Science. 2018;153 :38-45.
Sonia B. Résistance des entérobactéries aux carbapénèmes et carbapénèmases. 3ème conférence internationale d’infectiologie . 2018.
MOUSSAI M. Résolution des équations intégro-défférentielles. 2018.
Hadjkacem‐Loukil L, Hadj‐kacem H, Hadj Salem I, Bahloul A, Fakhfakh F, Ayadi H. Retracted: Genotyping of Tunisian azoospermic men with Sertoli cell‐only and maturation arrest. 2018.
Hadjkacem‐Loukil L, Hadj‐kacem H, Hadj Salem I, Bahloul A, Fakhfakh F, Ayadi H. Retracted: Genotyping of Tunisian azoospermic men with Sertoli cell‐only and maturation arrest. 2018.
Hadjkacem‐Loukil L, Hadj‐kacem H, Hadj Salem I, Bahloul A, Fakhfakh F, Ayadi H. Retracted: Genotyping of Tunisian azoospermic men with Sertoli cell‐only and maturation arrest. 2018.
Hadjkacem‐Loukil L, Hadj‐kacem H, Hadj Salem I, Bahloul A, Fakhfakh F, Ayadi H. Retracted: Genotyping of Tunisian azoospermic men with Sertoli cell‐only and maturation arrest. 2018.
Hadjkacem‐Loukil L, Hadj‐kacem H, Hadj Salem I, Bahloul A, Fakhfakh F, Ayadi H. Retracted: Genotyping of Tunisian azoospermic men with Sertoli cell‐only and maturation arrest. 2018.
Hadjkacem‐Loukil L, Hadj‐kacem H, Hadj Salem I, Bahloul A, Fakhfakh F, Ayadi H. Retracted: Genotyping of Tunisian azoospermic men with Sertoli cell‐only and maturation arrest. 2018.
Abderrahim Y, Zohir D, Salim A, Hichem B, Lamir S. RF/analog performances enhancement of short channel GAAJ MOSFET using source/drain extensions and metaheuristic optimization-based approach, ISSN / e-ISSN 2180-1843 / 2289-8131. Journal of Telecommunication, Electronic and Computer EngineeringJournal of Telecommunication, Electronic and Computer Engineering. 2018;volume 10.Abstract
This paper presents a hybrid strategy combining compact analytical models of short channel Gate-All-Around Junctionless (GAAJ) MOSFET and metaheuristic-based approach for parameters optimization. The proposed GAAJ MOSFET design includes highly extension regions doping. The aim is to investigate the impact of this design on the RF and analog performances systematically and to show the immunity behavior against the short channel effects (SCEs) degradation. In this context, an analytical model via the meticulous solution of 2D Poisson equation, incorporating source/drain (S/D) extensions effect, has been developed and verified by comparing it with TCAD simulation results. A comparative evaluation between the proposed GAAJ MOSFET structure and the classical device in terms of RF/Analog performances is also investigated. The proposed design provides RF/Analog performances improvement. Furthermore, based on the presented analytical models, Genetic Algorithms (GA) optimization approach is used to optimize the design of S/D parameters. The optimized structure exhibits better performances, i.e., cut-off frequency and drive current are improved. Besides, it shows superior immunity behavior against the RF/Analog degradation due to the unwanted SCEs. The insights offered by the proposed paradigm will help to enlighten designer in future challenges facing the GAAJ MOSFET technology for high RF/analog applications.

Pages