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2018
Mouni L, Belkhiri L, Bollinger J-C, Bouzaza A, Assadi A, Tirri A, Dahmoune F, Madani K, Remini H. Removal of Methylene Blue from aqueous solutions by adsorption on Kaolin: Kinetic and equilibrium studies. Applied Clay ScienceApplied Clay Science. 2018;153 :38-45.
Mouni L, Belkhiri L, Bollinger J-C, Bouzaza A, Assadi A, Tirri A, Dahmoune F, Madani K, Remini H. Removal of Methylene Blue from aqueous solutions by adsorption on Kaolin: Kinetic and equilibrium studies. Applied Clay ScienceApplied Clay Science. 2018;153 :38-45.
Mouni L, Belkhiri L, Bollinger J-C, Bouzaza A, Assadi A, Tirri A, Dahmoune F, Madani K, Remini H. Removal of Methylene Blue from aqueous solutions by adsorption on Kaolin: Kinetic and equilibrium studies. Applied Clay ScienceApplied Clay Science. 2018;153 :38-45.
Sonia B. Résistance des entérobactéries aux carbapénèmes et carbapénèmases. 3ème conférence internationale d’infectiologie . 2018.
MOUSSAI M. Résolution des équations intégro-défférentielles. 2018.
Hadjkacem‐Loukil L, Hadj‐kacem H, Hadj Salem I, Bahloul A, Fakhfakh F, Ayadi H. Retracted: Genotyping of Tunisian azoospermic men with Sertoli cell‐only and maturation arrest. 2018.
Hadjkacem‐Loukil L, Hadj‐kacem H, Hadj Salem I, Bahloul A, Fakhfakh F, Ayadi H. Retracted: Genotyping of Tunisian azoospermic men with Sertoli cell‐only and maturation arrest. 2018.
Hadjkacem‐Loukil L, Hadj‐kacem H, Hadj Salem I, Bahloul A, Fakhfakh F, Ayadi H. Retracted: Genotyping of Tunisian azoospermic men with Sertoli cell‐only and maturation arrest. 2018.
Hadjkacem‐Loukil L, Hadj‐kacem H, Hadj Salem I, Bahloul A, Fakhfakh F, Ayadi H. Retracted: Genotyping of Tunisian azoospermic men with Sertoli cell‐only and maturation arrest. 2018.
Hadjkacem‐Loukil L, Hadj‐kacem H, Hadj Salem I, Bahloul A, Fakhfakh F, Ayadi H. Retracted: Genotyping of Tunisian azoospermic men with Sertoli cell‐only and maturation arrest. 2018.
Hadjkacem‐Loukil L, Hadj‐kacem H, Hadj Salem I, Bahloul A, Fakhfakh F, Ayadi H. Retracted: Genotyping of Tunisian azoospermic men with Sertoli cell‐only and maturation arrest. 2018.
Yousfi A, Dibi Z, Aissi S, Bencherif H, Saidi L. RF/analog performances enhancement of short channel GAAJ MOSFET using source/drain extensions and metaheuristic optimization-based approach. Journal of Telecommunication, Electronic and Computer Engineering (JTEC)Journal of Telecommunication, Electronic and Computer Engineering (JTEC). 2018;10 :81-90.
Abderrahim Y, Zohir D, Salim A, Hichem B, Lamir S. RF/analog performances enhancement of short channel GAAJ MOSFET using source/drain extensions and metaheuristic optimization-based approach, ISSN / e-ISSN 2180-1843 / 2289-8131. Journal of Telecommunication, Electronic and Computer EngineeringJournal of Telecommunication, Electronic and Computer Engineering. 2018;volume 10.Abstract
This paper presents a hybrid strategy combining compact analytical models of short channel Gate-All-Around Junctionless (GAAJ) MOSFET and metaheuristic-based approach for parameters optimization. The proposed GAAJ MOSFET design includes highly extension regions doping. The aim is to investigate the impact of this design on the RF and analog performances systematically and to show the immunity behavior against the short channel effects (SCEs) degradation. In this context, an analytical model via the meticulous solution of 2D Poisson equation, incorporating source/drain (S/D) extensions effect, has been developed and verified by comparing it with TCAD simulation results. A comparative evaluation between the proposed GAAJ MOSFET structure and the classical device in terms of RF/Analog performances is also investigated. The proposed design provides RF/Analog performances improvement. Furthermore, based on the presented analytical models, Genetic Algorithms (GA) optimization approach is used to optimize the design of S/D parameters. The optimized structure exhibits better performances, i.e., cut-off frequency and drive current are improved. Besides, it shows superior immunity behavior against the RF/Analog degradation due to the unwanted SCEs. The insights offered by the proposed paradigm will help to enlighten designer in future challenges facing the GAAJ MOSFET technology for high RF/analog applications.
Yousfi A, Dibi Z, Aissi S, Bencherif H, Saidi L. RF/analog performances enhancement of short channel GAAJ MOSFET using source/drain extensions and metaheuristic optimization-based approach. Journal of Telecommunication, Electronic and Computer Engineering (JTEC)Journal of Telecommunication, Electronic and Computer Engineering (JTEC). 2018;10 :81-90.
Abderrahim Y, Zohir D, Salim A, Hichem B, Lamir S. RF/analog performances enhancement of short channel GAAJ MOSFET using source/drain extensions and metaheuristic optimization-based approach, ISSN / e-ISSN 2180-1843 / 2289-8131. Journal of Telecommunication, Electronic and Computer EngineeringJournal of Telecommunication, Electronic and Computer Engineering. 2018;volume 10.Abstract
This paper presents a hybrid strategy combining compact analytical models of short channel Gate-All-Around Junctionless (GAAJ) MOSFET and metaheuristic-based approach for parameters optimization. The proposed GAAJ MOSFET design includes highly extension regions doping. The aim is to investigate the impact of this design on the RF and analog performances systematically and to show the immunity behavior against the short channel effects (SCEs) degradation. In this context, an analytical model via the meticulous solution of 2D Poisson equation, incorporating source/drain (S/D) extensions effect, has been developed and verified by comparing it with TCAD simulation results. A comparative evaluation between the proposed GAAJ MOSFET structure and the classical device in terms of RF/Analog performances is also investigated. The proposed design provides RF/Analog performances improvement. Furthermore, based on the presented analytical models, Genetic Algorithms (GA) optimization approach is used to optimize the design of S/D parameters. The optimized structure exhibits better performances, i.e., cut-off frequency and drive current are improved. Besides, it shows superior immunity behavior against the RF/Analog degradation due to the unwanted SCEs. The insights offered by the proposed paradigm will help to enlighten designer in future challenges facing the GAAJ MOSFET technology for high RF/analog applications.
Yousfi A, Dibi Z, Aissi S, Bencherif H, Saidi L. RF/analog performances enhancement of short channel GAAJ MOSFET using source/drain extensions and metaheuristic optimization-based approach. Journal of Telecommunication, Electronic and Computer Engineering (JTEC)Journal of Telecommunication, Electronic and Computer Engineering (JTEC). 2018;10 :81-90.
Abderrahim Y, Zohir D, Salim A, Hichem B, Lamir S. RF/analog performances enhancement of short channel GAAJ MOSFET using source/drain extensions and metaheuristic optimization-based approach, ISSN / e-ISSN 2180-1843 / 2289-8131. Journal of Telecommunication, Electronic and Computer EngineeringJournal of Telecommunication, Electronic and Computer Engineering. 2018;volume 10.Abstract
This paper presents a hybrid strategy combining compact analytical models of short channel Gate-All-Around Junctionless (GAAJ) MOSFET and metaheuristic-based approach for parameters optimization. The proposed GAAJ MOSFET design includes highly extension regions doping. The aim is to investigate the impact of this design on the RF and analog performances systematically and to show the immunity behavior against the short channel effects (SCEs) degradation. In this context, an analytical model via the meticulous solution of 2D Poisson equation, incorporating source/drain (S/D) extensions effect, has been developed and verified by comparing it with TCAD simulation results. A comparative evaluation between the proposed GAAJ MOSFET structure and the classical device in terms of RF/Analog performances is also investigated. The proposed design provides RF/Analog performances improvement. Furthermore, based on the presented analytical models, Genetic Algorithms (GA) optimization approach is used to optimize the design of S/D parameters. The optimized structure exhibits better performances, i.e., cut-off frequency and drive current are improved. Besides, it shows superior immunity behavior against the RF/Analog degradation due to the unwanted SCEs. The insights offered by the proposed paradigm will help to enlighten designer in future challenges facing the GAAJ MOSFET technology for high RF/analog applications.
Yousfi A, Dibi Z, Aissi S, Bencherif H, Saidi L. RF/analog performances enhancement of short channel GAAJ MOSFET using source/drain extensions and metaheuristic optimization-based approach. Journal of Telecommunication, Electronic and Computer Engineering (JTEC)Journal of Telecommunication, Electronic and Computer Engineering (JTEC). 2018;10 :81-90.
Abderrahim Y, Zohir D, Salim A, Hichem B, Lamir S. RF/analog performances enhancement of short channel GAAJ MOSFET using source/drain extensions and metaheuristic optimization-based approach, ISSN / e-ISSN 2180-1843 / 2289-8131. Journal of Telecommunication, Electronic and Computer EngineeringJournal of Telecommunication, Electronic and Computer Engineering. 2018;volume 10.Abstract
This paper presents a hybrid strategy combining compact analytical models of short channel Gate-All-Around Junctionless (GAAJ) MOSFET and metaheuristic-based approach for parameters optimization. The proposed GAAJ MOSFET design includes highly extension regions doping. The aim is to investigate the impact of this design on the RF and analog performances systematically and to show the immunity behavior against the short channel effects (SCEs) degradation. In this context, an analytical model via the meticulous solution of 2D Poisson equation, incorporating source/drain (S/D) extensions effect, has been developed and verified by comparing it with TCAD simulation results. A comparative evaluation between the proposed GAAJ MOSFET structure and the classical device in terms of RF/Analog performances is also investigated. The proposed design provides RF/Analog performances improvement. Furthermore, based on the presented analytical models, Genetic Algorithms (GA) optimization approach is used to optimize the design of S/D parameters. The optimized structure exhibits better performances, i.e., cut-off frequency and drive current are improved. Besides, it shows superior immunity behavior against the RF/Analog degradation due to the unwanted SCEs. The insights offered by the proposed paradigm will help to enlighten designer in future challenges facing the GAAJ MOSFET technology for high RF/analog applications.
Yousfi A, Dibi Z, Aissi S, Bencherif H, Saidi L. RF/analog performances enhancement of short channel GAAJ MOSFET using source/drain extensions and metaheuristic optimization-based approach. Journal of Telecommunication, Electronic and Computer Engineering (JTEC)Journal of Telecommunication, Electronic and Computer Engineering (JTEC). 2018;10 :81-90.

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