2016
Hichem F, Fayçal DJEFFAL, Toufik B.
Numerical Investigation of A New Junctionless Phototransistor for High-Performance and Ultra-Low Power Infrared Communication Applications, ISSN 1693-6930. ℡KOMNIKATelkomnika. 2016;volume 14 :pp 1-3.
AbstractIn this paper, a new junctionless optical controlled field effect transistor (JL-OCFET) is proposed to improve the device performance as well as achieving low power consumption. An overall optical and electrical performances comparison of the proposed junctionless design and the conventional inversion mode structure (IM-OCFET) has been developed numerically, to assess the optical modulation behavior of the OCFET for low power optical interconnections applications. It is found that, the proposed design demonstrates excellent capability in decreasing the phototransistor power consumption for inter-chip optical communication application. Moreover, the proposed device offers superior sensitivity and ION/IOFF ratio, in addition to lower signal to noise ratio as compared to the conventional IM-OCFET structure. The obtained results indicate the crucial role of the junctionless (JL) design in enhancing the phototransistor performance and reducing the total power dissipation. Such a very sensitive OCFET can be very promising in the future low power optical receiver less compatible to CMOS modern technology for high-quality interchips data communication applications.
Hichem F, Fayçal DJEFFAL, Toufik B.
Numerical Investigation of A New Junctionless Phototransistor for High-Performance and Ultra-Low Power Infrared Communication Applications, ISSN 1693-6930. ℡KOMNIKATelkomnika. 2016;volume 14 :pp 1-3.
AbstractIn this paper, a new junctionless optical controlled field effect transistor (JL-OCFET) is proposed to improve the device performance as well as achieving low power consumption. An overall optical and electrical performances comparison of the proposed junctionless design and the conventional inversion mode structure (IM-OCFET) has been developed numerically, to assess the optical modulation behavior of the OCFET for low power optical interconnections applications. It is found that, the proposed design demonstrates excellent capability in decreasing the phototransistor power consumption for inter-chip optical communication application. Moreover, the proposed device offers superior sensitivity and ION/IOFF ratio, in addition to lower signal to noise ratio as compared to the conventional IM-OCFET structure. The obtained results indicate the crucial role of the junctionless (JL) design in enhancing the phototransistor performance and reducing the total power dissipation. Such a very sensitive OCFET can be very promising in the future low power optical receiver less compatible to CMOS modern technology for high-quality interchips data communication applications.
Toufik B, Fayçal DJEFFAL, Djemai A, Mohamed M.
Numerical investigation of nanoscale double-gate junctionless MOSFET with drain and source extensions including interfacial defects, ISSN / e-ISSN 1862-6351 / 1610-1642. Physica Status Solidi © Current Topics in Solid State PhysicsPhysica Status Solidi © Current Topics in Solid State Physics. 2016;volume 13 :pp 151-155.
AbstractThe use of uniformly doped channel, source and drain regions presents the well-known problem of the high series resistance associated to the extensions, which degrades the electrical performance of the nanoscale multi-gate junctionless MOSFETs. Therefore, new designs and accurate investigation of nanoscale double gate junctionless (DGJ) MOSFET including the defects at the interface Si/SiO2 are required for the comprehension of the fundamentals of such device behavior against the ageing phenomenon. Based on 2D numerical investigation of a nanoscale DGJ MOSFET, in the present work a numerical study for I-V and small signal characteristics, by including both the highly doped extension regions and the interfacial defects, is presented. The investigated design, which is a technologically feasible technique by introducing only one ion implantation step, provides a good solution to improve the device immunity against the interfacial defects under critical conditions, where the channel length is taken equals to 10 nm. In this context, I-V, analog and linearity characteristics are investigated by an appropriate 2-D numerical modeling, where the obtained results are compared with those of the conventional DGJ MOSFETs. (© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Toufik B, Fayçal DJEFFAL, Djemai A, Mohamed M.
Numerical investigation of nanoscale double-gate junctionless MOSFET with drain and source extensions including interfacial defects, ISSN / e-ISSN 1862-6351 / 1610-1642. Physica Status Solidi © Current Topics in Solid State PhysicsPhysica Status Solidi © Current Topics in Solid State Physics. 2016;volume 13 :pp 151-155.
AbstractThe use of uniformly doped channel, source and drain regions presents the well-known problem of the high series resistance associated to the extensions, which degrades the electrical performance of the nanoscale multi-gate junctionless MOSFETs. Therefore, new designs and accurate investigation of nanoscale double gate junctionless (DGJ) MOSFET including the defects at the interface Si/SiO2 are required for the comprehension of the fundamentals of such device behavior against the ageing phenomenon. Based on 2D numerical investigation of a nanoscale DGJ MOSFET, in the present work a numerical study for I-V and small signal characteristics, by including both the highly doped extension regions and the interfacial defects, is presented. The investigated design, which is a technologically feasible technique by introducing only one ion implantation step, provides a good solution to improve the device immunity against the interfacial defects under critical conditions, where the channel length is taken equals to 10 nm. In this context, I-V, analog and linearity characteristics are investigated by an appropriate 2-D numerical modeling, where the obtained results are compared with those of the conventional DGJ MOSFETs. (© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Toufik B, Fayçal DJEFFAL, Djemai A, Mohamed M.
Numerical investigation of nanoscale double-gate junctionless MOSFET with drain and source extensions including interfacial defects, ISSN / e-ISSN 1862-6351 / 1610-1642. Physica Status Solidi © Current Topics in Solid State PhysicsPhysica Status Solidi © Current Topics in Solid State Physics. 2016;volume 13 :pp 151-155.
AbstractThe use of uniformly doped channel, source and drain regions presents the well-known problem of the high series resistance associated to the extensions, which degrades the electrical performance of the nanoscale multi-gate junctionless MOSFETs. Therefore, new designs and accurate investigation of nanoscale double gate junctionless (DGJ) MOSFET including the defects at the interface Si/SiO2 are required for the comprehension of the fundamentals of such device behavior against the ageing phenomenon. Based on 2D numerical investigation of a nanoscale DGJ MOSFET, in the present work a numerical study for I-V and small signal characteristics, by including both the highly doped extension regions and the interfacial defects, is presented. The investigated design, which is a technologically feasible technique by introducing only one ion implantation step, provides a good solution to improve the device immunity against the interfacial defects under critical conditions, where the channel length is taken equals to 10 nm. In this context, I-V, analog and linearity characteristics are investigated by an appropriate 2-D numerical modeling, where the obtained results are compared with those of the conventional DGJ MOSFETs. (© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Toufik B, Fayçal DJEFFAL, Djemai A, Mohamed M.
Numerical investigation of nanoscale double-gate junctionless MOSFET with drain and source extensions including interfacial defects, ISSN / e-ISSN 1862-6351 / 1610-1642. Physica Status Solidi © Current Topics in Solid State PhysicsPhysica Status Solidi © Current Topics in Solid State Physics. 2016;volume 13 :pp 151-155.
AbstractThe use of uniformly doped channel, source and drain regions presents the well-known problem of the high series resistance associated to the extensions, which degrades the electrical performance of the nanoscale multi-gate junctionless MOSFETs. Therefore, new designs and accurate investigation of nanoscale double gate junctionless (DGJ) MOSFET including the defects at the interface Si/SiO2 are required for the comprehension of the fundamentals of such device behavior against the ageing phenomenon. Based on 2D numerical investigation of a nanoscale DGJ MOSFET, in the present work a numerical study for I-V and small signal characteristics, by including both the highly doped extension regions and the interfacial defects, is presented. The investigated design, which is a technologically feasible technique by introducing only one ion implantation step, provides a good solution to improve the device immunity against the interfacial defects under critical conditions, where the channel length is taken equals to 10 nm. In this context, I-V, analog and linearity characteristics are investigated by an appropriate 2-D numerical modeling, where the obtained results are compared with those of the conventional DGJ MOSFETs. (© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Dib A, Hassam A, Srairi K, Saidi L.
Numerical Modeling and Heuristic Algorithms for Nanogenerator Behavior Analysis, in
Conference on Advances in Information Processing and Communication Technology - IPCT. Rome, Italy ; 2016 :86 – 90.
Publisher's VersionAbstract
Recently, the desire for a self-powered micro and nanodevices has attracted a great interest of using sustainable energy sources. Further, the ultimate goal of nanogenerator is to harvest energy from the ambient environment in which a self powered device based on these generators is needed. With the development of nanogeneratorbased circuits design and optimization, the building of new device simulator is necessary for the study and the synthesis of electromecanical parameters of this type of models. In the present article, both numerical modeling and optimization of piezoelectric nanogenerator based on zinc oxide have been carried out. They aim to improve the electromecanical performances, robustness, and synthesis process for nanogenerator. The proposed model has been developed for a systematic study of the nanowire morphology parameters in stretching mode. In addition, heuristic optimization technique, namely, particle swarm optimization has been implemented for an analytic modeling and an optimization of nanogeneratorbased process in stretching mode. Moreover, the obtained results have been tested and compared with conventional model where a good agreement has been obtained for excitation mode. The developed nanogenerator model can be generalized, extended and integrated into simulators devices to study nanogenerator-based circuits.
Dib A, Hassam A, Srairi K, Saidi L.
Numerical Modeling and Heuristic Algorithms for Nanogenerator Behavior Analysis. International Journal of Advancements in Electronics and Electrical EngineeringInternational Journal of Advancements in Electronics and Electrical Engineering. 2016;5.
AbstractRecently, the desire for a self-powered micro and nanodevices has attracted a great interest of using sustainable energy sources. Further, the ultimate goal of nanogenerator is to harvest energy from the ambient environment in which a self powered device based on these generators is needed. With the development of nanogenerator-based circuits design and optimization, the building of new device simulator is necessary for the study and the synthesis of electromecanical parameters of this type of models. In the present article, both numerical modeling and optimization of piezoelectric nanogenerator based on zinc oxide have been carried out. They aim to improve the electromecanical performances, robustness, and synthesis process for nanogenerator. The proposed model has been developed for a systematic study of the nanowire morphology parameters in stretching mode. In addition, heuristic optimization technique, namely, particle swarm optimization has been implemented for an analytic modeling and an optimization of nanogenerator-based process in stretching mode. Moreover, the obtained results have been tested and compared with conventional model where a good agreement has been obtained for excitation mode. The developed nanogenerator model can be generalized, extended and integrated into simulators devices to study nanogenerator-based circuits.
Dib A, Hassam A, Srairi K, Saidi L.
Numerical Modeling and Heuristic Algorithms for Nanogenerator Behavior Analysis, in
Conference on Advances in Information Processing and Communication Technology - IPCT. Rome, Italy ; 2016 :86 – 90.
Publisher's VersionAbstract
Recently, the desire for a self-powered micro and nanodevices has attracted a great interest of using sustainable energy sources. Further, the ultimate goal of nanogenerator is to harvest energy from the ambient environment in which a self powered device based on these generators is needed. With the development of nanogeneratorbased circuits design and optimization, the building of new device simulator is necessary for the study and the synthesis of electromecanical parameters of this type of models. In the present article, both numerical modeling and optimization of piezoelectric nanogenerator based on zinc oxide have been carried out. They aim to improve the electromecanical performances, robustness, and synthesis process for nanogenerator. The proposed model has been developed for a systematic study of the nanowire morphology parameters in stretching mode. In addition, heuristic optimization technique, namely, particle swarm optimization has been implemented for an analytic modeling and an optimization of nanogeneratorbased process in stretching mode. Moreover, the obtained results have been tested and compared with conventional model where a good agreement has been obtained for excitation mode. The developed nanogenerator model can be generalized, extended and integrated into simulators devices to study nanogenerator-based circuits.
Dib A, Hassam A, Srairi K, Saidi L.
Numerical Modeling and Heuristic Algorithms for Nanogenerator Behavior Analysis. International Journal of Advancements in Electronics and Electrical EngineeringInternational Journal of Advancements in Electronics and Electrical Engineering. 2016;5.
AbstractRecently, the desire for a self-powered micro and nanodevices has attracted a great interest of using sustainable energy sources. Further, the ultimate goal of nanogenerator is to harvest energy from the ambient environment in which a self powered device based on these generators is needed. With the development of nanogenerator-based circuits design and optimization, the building of new device simulator is necessary for the study and the synthesis of electromecanical parameters of this type of models. In the present article, both numerical modeling and optimization of piezoelectric nanogenerator based on zinc oxide have been carried out. They aim to improve the electromecanical performances, robustness, and synthesis process for nanogenerator. The proposed model has been developed for a systematic study of the nanowire morphology parameters in stretching mode. In addition, heuristic optimization technique, namely, particle swarm optimization has been implemented for an analytic modeling and an optimization of nanogenerator-based process in stretching mode. Moreover, the obtained results have been tested and compared with conventional model where a good agreement has been obtained for excitation mode. The developed nanogenerator model can be generalized, extended and integrated into simulators devices to study nanogenerator-based circuits.