Study of Si (100)-SiO2 Interface Trap Time Constant Distributions in Large Area Conventional MOSFETs-Comparison with Submicron Devices

Citation:

Bauza D, Guenifi N. Study of Si (100)-SiO2 Interface Trap Time Constant Distributions in Large Area Conventional MOSFETs-Comparison with Submicron Devices. ECS TransactionsECS Transactions. 2020;97 :83.

Date Published:

2020

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