Abstract:

In this paper, exhaustive analytical investigation based on analyzing the impact of the self-heating phenomenon on the power GaN HEMT performance is proposed. To do so, analytical models for the drain current, power dissipation and lattice temperature variation are developed in order to evaluate the device reliability against the self-heating effects (SHEs). The transistor thermal stability is systematically investigated with respect to the dependence on the buffer layer doping, mole fraction variation, and layer thickness. In this work, the electrical and thermal performance of power GaN HEMT structure is investigated. Also, device design parameters dependent characteristics on thermal stability and immunity are observed and analyzed. The obtained results provide new insight for bridging the gap between high power performances with thermal stability factor.