In this paper, a graded channel doping paradigm is proposed to improve the nanoscale double gate junctionless DGJL MOSFET electrical performance. A careful mechanism study based on numerical investigation and a performance comparison between the proposed and conventional design is carried out. The device figures-of-merit, governing the switching and leakage current behavior are investigated in order to reveal the transistor electrical performance for ultra-low power consumption. It is found that the channel doping engineering feature has a profound implication in enhancing the device electrical performance. Moreover, the impact of the high-k gate dielectric on the device leakage performance is also analyzed. The results show that the proposed design with gate stacking demonstrates superior ION/IOFF ratio and lower leakage current as compared to the conventional counterpart. Our analysis highlights the good ability of the proposed design including a high-k gate dielectric for the reduction of the leakage current. These characteristics underline the distinctive electrical behavior of the proposed design and also suggest the possibility for bridging the gap between the high derived current capability and low leakage power. This makes the proposed GCD-DGJL MOSFET with gate stacking a potential alternative for high performance and ultra-low power consumption applications.

The pumping of liquid metals by magnetohydrodynamic (MHD) converters, without any moving parts are competing with conventional hydraulic pumps. Thus, the movement of the fluid is a consequence of the interaction the magnetic and electric fields. This work relates to the application of an approach for optimal design of a DC magneto-hydrodynamic pump. The optimization method is based on the solution of non-linear constrained problem by combination global and local optimization method. This paper applies the hybrid algorithm by combination of genetic algorithm and Fmincon for optimal design of DC MHD pump. The comparative study of the obtained results shows that the performance of the hybrid method is effectively improved.

The study of the water quality in the shallow aquifer of Tebessa-Morsott was carried out to perform a preliminary assessment of the hydrochemical quality of same groundwater samples and their suitability for irrigation uses. The high salinity coupled with groundwater level decline pose serious problems for current irrigation and domestic water supplies as well as for future exploitation. The statistical treatment of hydrochemical data by principal component analysis revealed two components related to salinity and pollution. The US salinity diagram illustrates that most of the groundwater samples fall in C3S1- C4S1 quality with high salinity hazard and low sodium hazard.

The study of the water quality in the shallow aquifer of Tebessa-Morsott was carried out to perform a preliminary assessment of the hydrochemical quality of same groundwater samples and their suitability for irrigation uses. The high salinity coupled with groundwater level decline pose serious problems for current irrigation and domestic water supplies as well as for future exploitation. The statistical treatment of hydrochemical data by principal component analysis revealed two components related to salinity and pollution. The US salinity diagram illustrates that most of the groundwater samples fall in C3S1- C4S1 quality with high salinity hazard and low sodium hazard.

The study of the water quality in the alluvial aquifer of Tebessa-Morsott basinwas carried out to perform a preliminary assessmentof the hydrochemical quality of same groundwater samples and their suitability for irrigation uses. The high salinity coupledwith groundwater level decline pose serious problems for current irrigation and domestic water supplies as well as for future exploitation. The statistical treatment of hydrochemical data by principal component analysis revealed two components related to salinity and pollution.The US salinity diagram illustrates that most of the groundwater samples fall in C3S1-C4S1 quality with high salinity hazard and low sodium hazard.

A hill reservoir research project aims, among other perspectives, to improve the regional agriculture potential through irrigation of small areas. For such a project, the feasibility study for a given area is fundamental before the establishment of any related applied research works. This paper is of a socio-economic relevance for the Timgad region (NE Algeria) as the presented results consist of a contribution of both socio-economic operators and policy makers. In the study area, water resources are closely related to the regional geology and the main objectives of the establishment of the Foum-Toub hill reservoir is to promote the irrigation of its plain, regulate the flow of the Foum-Toub creek and minimize the silting of the Koudiet Lemdaour dam. The selected sites for the construction of this work are characterized by an impermeable bedrock. Loose material, favorable to serve as borrow areas, can be supplied from the surrounding depressions where sandstone can also be used for the dike construction.

Gate engineering and highly doped source/drain region have been investigated to design a new DNA sensor for use in biomedical applications based on a double gate (DG) dielectric modulated (DM) junctionless (JL) metal oxide semiconductor field effect transistor (MOSFET) with triple material (TM) gate. Based on the dielectric modulation effect, DNA molecules in the nanogap cavity change due to the charge density of biomolecules, producing a change in the threshold voltage of the device. Analytical and numerical analysis was carried out to reveal the impact of physical parameters on the sensitivity of the proposed biosensor. Various characteristics, such as the surface potential, threshold voltage, and drain current were also investigated. The effectiveness of the proposed TM-DG-DM-JL-MOSFET structure with highly doped source/drain extensions is confirmed by comparison of the results with those for a conventional single-materiel (SM) gate DM-JL-MOSFET, revealing a good improvement in sensitivity and making the proposed structure an attractive solution for use in DNA-based sensor applications.