An analytical drain current model for undoped GSDG MOSFETs including interfacial hot‐carrier effects

Citation:

DJEFFAL F, Bentrcia T, BENDIB T. An analytical drain current model for undoped GSDG MOSFETs including interfacial hot‐carrier effects. physica status solidi cphysica status solidi c. 2011;8 :907-910.

Date Published:

2011

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