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Publications by Author: Fayçal DJEFFAL

2020
Bentrcia T, DJEFFAL F, Ferhati H, Dibi Z. A comparative study on scaling capabilities of Si and SiGe nanoscale double gate tunneling FETs. SiliconSilicon. 2020;12 :945-953.
Bentrcia T, DJEFFAL F, Chahdi M. Performance evaluation of nanoscale halo dual-material double gate SiGe MOSFET using 2-D numerical simulation. Materials Today: ProceedingsMaterials Today: Proceedings. 2020;20 :348-355.
Ferhati H, DJEFFAL F, Bentrcia T. Role of Material Gate Engineering in Improving Gate All Around Junctionless (GAAJL) MOSFET Reliability Against Hot-Carrier Effects. 2020 32nd International Conference on Microelectronics (ICM). 2020 :1-4.
2019
Tamersit K, DJEFFAL F. Carbon nanotube field-effect transistor with vacuum gate dielectric for label-free detection of DNA molecules: a computational investigation. IEEE Sensors JournalIEEE Sensors Journal. 2019;19 :9263-9270.
Tamersit K, DJEFFAL F. A computationally efficient hybrid approach based on artificial neural networks and the wavelet transform for quantum simulations of graphene nanoribbon FETs. Journal of Computational ElectronicsJournal of Computational Electronics. 2019;18 :813-825.
Ferhati H, DJEFFAL F, Benhaya A-E, Bendjerad A. Giant detectivity of ZnO-based self-powered UV photodetector by inserting an engineered back gold layer using RF sputtering. IEEE Sensors JournalIEEE Sensors Journal. 2019;20 :3512-3519.
Ferhati H, DJEFFAL F. High-responsivity MSM solar-blind UV photodetector based on annealed ITO/Ag/ITO structure using RF sputtering. IEEE Sensors JournalIEEE Sensors Journal. 2019;19 :7942-7949.
Abdelmalek N, DJEFFAL F, Bentrcia T. A nonlocal approach for semianalytical modeling of a heterojunction vertical surrounding-gate tunnel FET. Journal of Computational ElectronicsJournal of Computational Electronics. 2019;18 :104-119.
2018
Chebaki E, DJEFFAL F, Bentrcia T. ANFIS-based approach to predict the degradation-related ageing of Junctionless GAA MOSFET. Materials Today: ProceedingsMaterials Today: Proceedings. 2018;5 :15949-15958.
Tamersit K, DJEFFAL F. Boosting the performance of a nanoscale graphene nanoribbon field-effect transistor using graded gate engineering. Journal of Computational ElectronicsJournal of Computational Electronics. 2018;17 :1276-1284.
Abdelmalek N, DJEFFAL F, Bentrcia T. Continuous semianalytical modeling of vertical surrounding-gate tunnel FET: analog/RF performance evaluation. Journal of Computational ElectronicsJournal of Computational Electronics. 2018;17 :724-735.
Tamersit K, DJEFFAL F. A novel graphene field-effect transistor for radiation sensing application with improved sensitivity: Proposal and analysis. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated EquipmentNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 2018;901 :32-39.
Ferhati H, DJEFFAL F, Bentrcia T. The role of the Ge mole fraction in improving the performance of a nanoscale junctionless tunneling FET: concept and scaling capability. Beilstein Journal of NanotechnologyBeilstein Journal of Nanotechnology. 2018;9 :1856-1862.
Kadri A, Menacer F, DJEFFAL F. Simulation and analysis of Graphene-based nanoelectronic circuits using ANN method. Materials Today: ProceedingsMaterials Today: Proceedings. 2018;5 :15959-15967.
2017
Ferhati H, DJEFFAL F, Arar D, Dibi Z. Efficiency Enhancement of a‐Si: H/c‐Si‐Based Radial Solar Cell by Optimizing the Geometrical and Electrical Parameters. physica status solidi cphysica status solidi c. 2017;14 :1700146.
Bentrcia T, DJEFFAL F, Arar D, Chebaki E. Improved reliability performance of junctionless nanoscale DG MOSFET with graded channel doping engineering. physica status solidi cphysica status solidi c. 2017;14 :1700147.
Ferhati H, DJEFFAL F. Improved ZnO/glass thin film UV photodetector performance based on introduction of intermediate metallic sub-layers. Materials Today: ProceedingsMaterials Today: Proceedings. 2017;4 :6930-6937.
Bentrcia T, DJEFFAL F, Chebaki E, Arar D. A Kriging framework for the efficient exploitation of the nanoscale junctioless DG MOSFETs including source/drain extensions and hot carrier effect. Materials Today: ProceedingsMaterials Today: Proceedings. 2017;4 :6804-6813.
Aouf AE, DJEFFAL F, Douak F. Thermal stability investigation of power GaN HEMT includingself-heating effects. 6th International Conference on Systems and Control (ICSC). 2017.Abstract

In this paper, exhaustive analytical investigation based on analyzing the impact of the self-heating phenomenon on the power GaN HEMT performance is proposed. To do so, analytical models for the drain current, power dissipation and lattice temperature variation are developed in order to evaluate the device reliability against the self-heating effects (SHEs). The transistor thermal stability is systematically investigated with respect to the dependence on the buffer layer doping, mole fraction variation, and layer thickness. In this work, the electrical and thermal performance of power GaN HEMT structure is investigated. Also, device design parameters dependent characteristics on thermal stability and immunity are observed and analyzed. The obtained results provide new insight for bridging the gap between high power performances with thermal stability factor.

2016
Tamersit K, DJEFFAL F. Double-gate graphene nanoribbon field-effect transistor for DNA and gas sensing applications: simulation study and sensitivity analysis. IEEE Sensors JournalIEEE Sensors Journal. 2016;16 :4180-4191.

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