Improved reliability performance of junctionless nanoscale DG MOSFET with graded channel doping engineering

Citation:

Bentrcia T, DJEFFAL F, Arar D, Chebaki E. Improved reliability performance of junctionless nanoscale DG MOSFET with graded channel doping engineering. physica status solidi cphysica status solidi c. 2017;14 :1700147.

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2017

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