The aim of this paper is to examine a premature breakage of two compression plates for fixing broken bones with different patients for the period of their recovery. Each compression plate's breakage can induce grave consequences such as a new surgery, unexpected undesired complications and a prolonged healing time. The investigation of the compression plate breakage causes required an examination of the chemical composition and steel hardness, metallographic examination as well as that of the compression plate breakage surface by means of macroscopic and microscopic observations using microscope. On the origin of the results it can be established that the breakage was caused by high static load.

The aim of this paper is to examine a premature breakage of two compression plates for fixing broken bones with different patients for the period of their recovery. Each compression plate's breakage can induce grave consequences such as a new surgery, unexpected undesired complications and a prolonged healing time. The investigation of the compression plate breakage causes required an examination of the chemical composition and steel hardness, metallographic examination as well as that of the compression plate breakage surface by means of macroscopic and microscopic observations using microscope. On the origin of the results it can be established that the breakage was caused by high static load.

The aim of this paper is to examine a premature breakage of two compression plates for fixing broken bones with different patients for the period of their recovery. Each compression plate's breakage can induce grave consequences such as a new surgery, unexpected undesired complications and a prolonged healing time. The investigation of the compression plate breakage causes required an examination of the chemical composition and steel hardness, metallographic examination as well as that of the compression plate breakage surface by means of macroscopic and microscopic observations using microscope. On the origin of the results it can be established that the breakage was caused by high static load.

Boron Phosphorus and Arsenic atoms used as doping for the polysilicon gate they can cause crucial problem of metal-oxide- Semiconductor (MOS) devices. In this work, in order to improve the electrical parameters of MOS transistor such as, threshold voltage and flat band voltage, we have simulated Boron, Phosphorus and Arsenic Diffusion profiles in three dimensions in a polysilicon layer using the simulator Athena based on Pearson type IV models. We have study profile of dopant in 3-D before and after thermal annealing in a highly doped polysilicon film. The model takes into account the distribution of vacancy mechanism by associating parameters and effects related to high concentrations, such as the formation of clusters by trapping and exceeding the solid solubility limit. Based on the literature the model is solved under windows seven, following a well-defined algorithm. also We have studied the influence of some parameters, like concentration, temperature, time, dose and energy on implantation profiles of Boron, Phosphorus and Arsenic. The results have analyzed and discussed in order to extract depth of doping (Phosphorus Arsenic and boron) and it has been able to optimize the silicon oxide thickness, to reduce the penetration of doping. This theoretical analyses show that technological conditions preserve the quality of the silicon oxide structure studied. The model is validated with the help of simulation results obtained from Matlab

Boron Phosphorus and Arsenic atoms used as doping for the polysilicon gate they can cause crucial problem of metal-oxide- Semiconductor (MOS) devices. In this work, in order to improve the electrical parameters of MOS transistor such as, threshold voltage and flat band voltage, we have simulated Boron, Phosphorus and Arsenic Diffusion profiles in three dimensions in a polysilicon layer using the simulator Athena based on Pearson type IV models. We have study profile of dopant in 3-D before and after thermal annealing in a highly doped polysilicon film. The model takes into account the distribution of vacancy mechanism by associating parameters and effects related to high concentrations, such as the formation of clusters by trapping and exceeding the solid solubility limit. Based on the literature the model is solved under windows seven, following a well-defined algorithm. also We have studied the influence of some parameters, like concentration, temperature, time, dose and energy on implantation profiles of Boron, Phosphorus and Arsenic. The results have analyzed and discussed in order to extract depth of doping (Phosphorus Arsenic and boron) and it has been able to optimize the silicon oxide thickness, to reduce the penetration of doping. This theoretical analyses show that technological conditions preserve the quality of the silicon oxide structure studied. The model is validated with the help of simulation results obtained from Matlab

Boron Phosphorus and Arsenic atoms used as doping for the polysilicon gate they can cause crucial problem of metal-oxide- Semiconductor (MOS) devices. In this work, in order to improve the electrical parameters of MOS transistor such as, threshold voltage and flat band voltage, we have simulated Boron, Phosphorus and Arsenic Diffusion profiles in three dimensions in a polysilicon layer using the simulator Athena based on Pearson type IV models. We have study profile of dopant in 3-D before and after thermal annealing in a highly doped polysilicon film. The model takes into account the distribution of vacancy mechanism by associating parameters and effects related to high concentrations, such as the formation of clusters by trapping and exceeding the solid solubility limit. Based on the literature the model is solved under windows seven, following a well-defined algorithm. also We have studied the influence of some parameters, like concentration, temperature, time, dose and energy on implantation profiles of Boron, Phosphorus and Arsenic. The results have analyzed and discussed in order to extract depth of doping (Phosphorus Arsenic and boron) and it has been able to optimize the silicon oxide thickness, to reduce the penetration of doping. This theoretical analyses show that technological conditions preserve the quality of the silicon oxide structure studied. The model is validated with the help of simulation results obtained from Matlab

The purpose of this paper is to improve data gathering from oilfield wells (GEA: Gassi El Agreb oilfield case study) by the integration of deported autonomous flowmeters installed on these wells in a DCS control system. Indeed, oil and gas industry is very much linked to technological progress of electronics and informatics; this has allowed a considerable evolution of production processes control. This evolution is translated by process control techniques change: from pneumatic systems to electronic systems, from analog to digital ones and then from centralized control to distributed one which we commonly call DCS (Distributed Control System).

The purpose of this paper is to improve data gathering from oilfield wells (GEA: Gassi El Agreb oilfield case study) by the integration of deported autonomous flowmeters installed on these wells in a DCS control system. Indeed, oil and gas industry is very much linked to technological progress of electronics and informatics; this has allowed a considerable evolution of production processes control. This evolution is translated by process control techniques change: from pneumatic systems to electronic systems, from analog to digital ones and then from centralized control to distributed one which we commonly call DCS (Distributed Control System).

The purpose of this paper is to improve data gathering from oilfield wells (GEA: Gassi El Agreb oilfield case study) by the integration of deported autonomous flowmeters installed on these wells in a DCS control system. Indeed, oil and gas industry is very much linked to technological progress of electronics and informatics; this has allowed a considerable evolution of production processes control. This evolution is translated by process control techniques change: from pneumatic systems to electronic systems, from analog to digital ones and then from centralized control to distributed one which we commonly call DCS (Distributed Control System).

The purpose of this paper is to improve data gathering from oilfield wells (GEA: Gassi El Agreb oilfield case study) by the integration of deported autonomous flowmeters installed on these wells in a DCS control system. Indeed, oil and gas industry is very much linked to technological progress of electronics and informatics; this has allowed a considerable evolution of production processes control. This evolution is translated by process control techniques change: from pneumatic systems to electronic systems, from analog to digital ones and then from centralized control to distributed one which we commonly call DCS (Distributed Control System).

This paper, present the resonant and the radiation characteristics of superconducting rectangular microstrip antenna printed on uniaxailly anisotropic substrate using an electromagnetic approach based on cavity model in conjunction with electromagnetic knowledge. The cavity model combined with London's equations and the Gorter-Casimir two-fluid model has been improved to investigate the resonant characteristics as well as the radiation patterns of high Tc superconducting rectangular microstrip patch in the case where the patch is printed on uniaxially anisotropic substrate materials. The most advantage of our extended model include low computational cost and mathematical simplify. The numerical simulation of this modeling shows excellent agreement with experimental results available in the literature. Finally, radiation patterns of superconducting rectangular patch on anisotropic substrate are also presented.

This paper, present the resonant and the radiation characteristics of superconducting rectangular microstrip antenna printed on uniaxailly anisotropic substrate using an electromagnetic approach based on cavity model in conjunction with electromagnetic knowledge. The cavity model combined with London's equations and the Gorter-Casimir two-fluid model has been improved to investigate the resonant characteristics as well as the radiation patterns of high Tc superconducting rectangular microstrip patch in the case where the patch is printed on uniaxially anisotropic substrate materials. The most advantage of our extended model include low computational cost and mathematical simplify. The numerical simulation of this modeling shows excellent agreement with experimental results available in the literature. Finally, radiation patterns of superconducting rectangular patch on anisotropic substrate are also presented.

This paper, present the resonant and the radiation characteristics of superconducting rectangular microstrip antenna printed on uniaxailly anisotropic substrate using an electromagnetic approach based on cavity model in conjunction with electromagnetic knowledge. The cavity model combined with London's equations and the Gorter-Casimir two-fluid model has been improved to investigate the resonant characteristics as well as the radiation patterns of high Tc superconducting rectangular microstrip patch in the case where the patch is printed on uniaxially anisotropic substrate materials. The most advantage of our extended model include low computational cost and mathematical simplify. The numerical simulation of this modeling shows excellent agreement with experimental results available in the literature. Finally, radiation patterns of superconducting rectangular patch on anisotropic substrate are also presented.

This paper, present the resonant and the radiation characteristics of superconducting rectangular microstrip antenna printed on uniaxailly anisotropic substrate using an electromagnetic approach based on cavity model in conjunction with electromagnetic knowledge. The cavity model combined with London's equations and the Gorter-Casimir two-fluid model has been improved to investigate the resonant characteristics as well as the radiation patterns of high Tc superconducting rectangular microstrip patch in the case where the patch is printed on uniaxially anisotropic substrate materials. The most advantage of our extended model include low computational cost and mathematical simplify. The numerical simulation of this modeling shows excellent agreement with experimental results available in the literature. Finally, radiation patterns of superconducting rectangular patch on anisotropic substrate are also presented.