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2016
Kheloufi A, Chorfi A, Mansouri LM. The Mediterranean seawater: the impact on the germination and the seedlings emergence in three Acacia species. Journal of Biodiversity and Environmental SciencesJournal of Biodiversity and Environmental Sciences. 2016;8 :238-249.
Kheloufi A, Chorfi A, Mansouri LM. The Mediterranean seawater: the impact on the germination and the seedlings emergence in three Acacia species. Journal of Biodiversity and Environmental SciencesJournal of Biodiversity and Environmental Sciences. 2016;8 :238-249.
Kheloufi A, Chorfi A, Mansouri LM. The Mediterranean seawater: the impact on the germination and the seedlings emergence in three Acacia species. Journal of Biodiversity and Environmental SciencesJournal of Biodiversity and Environmental Sciences. 2016;8 :238-249.
Mohamed BAHEDDI, Mekhti D, Abdelhamid C. A method for predicting the deformation of swelling clay soils and designing shallow foundations that are subjected to uplifting. Acta Geotechnica SlovenicaActa Geotechnica Slovenica. 2016;13 :65-75.
Mohamed BAHEDDI, Mekhti D, Abdelhamid C. A method for predicting the deformation of swelling clay soils and designing shallow foundations that are subjected to uplifting. Acta Geotechnica SlovenicaActa Geotechnica Slovenica. 2016;13 :65-75.
Mohamed BAHEDDI, Mekhti D, Abdelhamid C. A method for predicting the deformation of swelling clay soils and designing shallow foundations that are subjected to uplifting. Acta Geotechnica SlovenicaActa Geotechnica Slovenica. 2016;13 :65-75.
Soraya G, Ramdane M, Stephanie E, Luc F, Mansour A, Aantoine R, Isabelle B. Microstructure and crystallinity of epitaxial silicon layer fabricated on double porous silicon, ISSN 2069-7201. Journal of Advanced Research in PhysicsJournal of Advanced Research in Physics. 2016;volume 6 :pp 021607.Abstract
Single crystal Silicon (Si) layers have been deposited by molecular beam epitaxy on double-layer porous silicon (PSi). We investigate the structure and morphology of double-layer PSi as fabricated and after annealing at high temperature. We show that a top thin layer with a low porosity is used as a seed layer for epitaxial growth. While, the underlying higher porosity layer is used as an easily detectable etch stop layer. The morphology and structure of epitaxial Si layer grown on the double-layer PSi are investigated by transmission electron microscopy and high resolution X-ray diffraction. The results show that, an epitaxial Si layer with a low defect density can be grown. Epitaxial growth of thin crystalline layers on double-layer PSi can provide opportunities for silicon-on-insulator applications and Si-based solar cells provided that the epitaxial layer has a sufficient crystallographic quality
Soraya G, amdane Mahamdi R, Escoubas S, Favre L, Aouassa M, Ronda A, Berezier I. Microstructure and crystallinity of epitaxial silicon layer fabricated on double porous siliconcs, ISSN / e-ISSN 2090-1232 / 2090-1224. Journal of A dvanced Research in PhysicsJournal of A dvanced Research in Physics. 2016;Volume 6 :pp 021607.Abstract
Single crystal Silicon (Si) layers have been deposited by molecular beam epitaxy on double-layer porous silicon (PSi). We investigate the structure and morphology of double-layer PSi as fabricated and after annealing at high temperature. We show that a top thin layer with a low porosity is used as a seed layer for epitaxial growth. While, the underlying higher porosity layer is used as an easily detectable etch stop layer. The morphology and structure of epitaxial Si layer grown on the double-layer PSi are investigated by transmission electron microscopy and high resolution X-ray diffraction. The results show that, an epitaxial Si layer with a low defect density can be grown. Epitaxial growth of thin crystalline layers on double-layer PSi can provide opportunities for silicon-on-insulator applications and Si-based solar cells provided that the epitaxial layer has a sufficient crystallographic quality.
Soraya G, Ramdane M, Stephanie E, Luc F, Mansour A, Aantoine R, Isabelle B. Microstructure and crystallinity of epitaxial silicon layer fabricated on double porous silicon, ISSN 2069-7201. Journal of Advanced Research in PhysicsJournal of Advanced Research in Physics. 2016;volume 6 :pp 021607.Abstract
Single crystal Silicon (Si) layers have been deposited by molecular beam epitaxy on double-layer porous silicon (PSi). We investigate the structure and morphology of double-layer PSi as fabricated and after annealing at high temperature. We show that a top thin layer with a low porosity is used as a seed layer for epitaxial growth. While, the underlying higher porosity layer is used as an easily detectable etch stop layer. The morphology and structure of epitaxial Si layer grown on the double-layer PSi are investigated by transmission electron microscopy and high resolution X-ray diffraction. The results show that, an epitaxial Si layer with a low defect density can be grown. Epitaxial growth of thin crystalline layers on double-layer PSi can provide opportunities for silicon-on-insulator applications and Si-based solar cells provided that the epitaxial layer has a sufficient crystallographic quality
Soraya G, Ramdane M, Stephanie E, Luc F, Mansour A, Aantoine R, Isabelle B. Microstructure and crystallinity of epitaxial silicon layer fabricated on double porous silicon, ISSN 2069-7201. Journal of Advanced Research in PhysicsJournal of Advanced Research in Physics. 2016;volume 6 :pp 021607.Abstract
Single crystal Silicon (Si) layers have been deposited by molecular beam epitaxy on double-layer porous silicon (PSi). We investigate the structure and morphology of double-layer PSi as fabricated and after annealing at high temperature. We show that a top thin layer with a low porosity is used as a seed layer for epitaxial growth. While, the underlying higher porosity layer is used as an easily detectable etch stop layer. The morphology and structure of epitaxial Si layer grown on the double-layer PSi are investigated by transmission electron microscopy and high resolution X-ray diffraction. The results show that, an epitaxial Si layer with a low defect density can be grown. Epitaxial growth of thin crystalline layers on double-layer PSi can provide opportunities for silicon-on-insulator applications and Si-based solar cells provided that the epitaxial layer has a sufficient crystallographic quality
Soraya G, amdane Mahamdi R, Escoubas S, Favre L, Aouassa M, Ronda A, Berezier I. Microstructure and crystallinity of epitaxial silicon layer fabricated on double porous siliconcs, ISSN / e-ISSN 2090-1232 / 2090-1224. Journal of A dvanced Research in PhysicsJournal of A dvanced Research in Physics. 2016;Volume 6 :pp 021607.Abstract
Single crystal Silicon (Si) layers have been deposited by molecular beam epitaxy on double-layer porous silicon (PSi). We investigate the structure and morphology of double-layer PSi as fabricated and after annealing at high temperature. We show that a top thin layer with a low porosity is used as a seed layer for epitaxial growth. While, the underlying higher porosity layer is used as an easily detectable etch stop layer. The morphology and structure of epitaxial Si layer grown on the double-layer PSi are investigated by transmission electron microscopy and high resolution X-ray diffraction. The results show that, an epitaxial Si layer with a low defect density can be grown. Epitaxial growth of thin crystalline layers on double-layer PSi can provide opportunities for silicon-on-insulator applications and Si-based solar cells provided that the epitaxial layer has a sufficient crystallographic quality.
Soraya G, Ramdane M, Stephanie E, Luc F, Mansour A, Aantoine R, Isabelle B. Microstructure and crystallinity of epitaxial silicon layer fabricated on double porous silicon, ISSN 2069-7201. Journal of Advanced Research in PhysicsJournal of Advanced Research in Physics. 2016;volume 6 :pp 021607.Abstract
Single crystal Silicon (Si) layers have been deposited by molecular beam epitaxy on double-layer porous silicon (PSi). We investigate the structure and morphology of double-layer PSi as fabricated and after annealing at high temperature. We show that a top thin layer with a low porosity is used as a seed layer for epitaxial growth. While, the underlying higher porosity layer is used as an easily detectable etch stop layer. The morphology and structure of epitaxial Si layer grown on the double-layer PSi are investigated by transmission electron microscopy and high resolution X-ray diffraction. The results show that, an epitaxial Si layer with a low defect density can be grown. Epitaxial growth of thin crystalline layers on double-layer PSi can provide opportunities for silicon-on-insulator applications and Si-based solar cells provided that the epitaxial layer has a sufficient crystallographic quality
Soraya G, Ramdane M, Stephanie E, Luc F, Mansour A, Aantoine R, Isabelle B. Microstructure and crystallinity of epitaxial silicon layer fabricated on double porous silicon, ISSN 2069-7201. Journal of Advanced Research in PhysicsJournal of Advanced Research in Physics. 2016;volume 6 :pp 021607.Abstract
Single crystal Silicon (Si) layers have been deposited by molecular beam epitaxy on double-layer porous silicon (PSi). We investigate the structure and morphology of double-layer PSi as fabricated and after annealing at high temperature. We show that a top thin layer with a low porosity is used as a seed layer for epitaxial growth. While, the underlying higher porosity layer is used as an easily detectable etch stop layer. The morphology and structure of epitaxial Si layer grown on the double-layer PSi are investigated by transmission electron microscopy and high resolution X-ray diffraction. The results show that, an epitaxial Si layer with a low defect density can be grown. Epitaxial growth of thin crystalline layers on double-layer PSi can provide opportunities for silicon-on-insulator applications and Si-based solar cells provided that the epitaxial layer has a sufficient crystallographic quality
Soraya G, amdane Mahamdi R, Escoubas S, Favre L, Aouassa M, Ronda A, Berezier I. Microstructure and crystallinity of epitaxial silicon layer fabricated on double porous siliconcs, ISSN / e-ISSN 2090-1232 / 2090-1224. Journal of A dvanced Research in PhysicsJournal of A dvanced Research in Physics. 2016;Volume 6 :pp 021607.Abstract
Single crystal Silicon (Si) layers have been deposited by molecular beam epitaxy on double-layer porous silicon (PSi). We investigate the structure and morphology of double-layer PSi as fabricated and after annealing at high temperature. We show that a top thin layer with a low porosity is used as a seed layer for epitaxial growth. While, the underlying higher porosity layer is used as an easily detectable etch stop layer. The morphology and structure of epitaxial Si layer grown on the double-layer PSi are investigated by transmission electron microscopy and high resolution X-ray diffraction. The results show that, an epitaxial Si layer with a low defect density can be grown. Epitaxial growth of thin crystalline layers on double-layer PSi can provide opportunities for silicon-on-insulator applications and Si-based solar cells provided that the epitaxial layer has a sufficient crystallographic quality.
Soraya G, Ramdane M, Stephanie E, Luc F, Mansour A, Aantoine R, Isabelle B. Microstructure and crystallinity of epitaxial silicon layer fabricated on double porous silicon, ISSN 2069-7201. Journal of Advanced Research in PhysicsJournal of Advanced Research in Physics. 2016;volume 6 :pp 021607.Abstract
Single crystal Silicon (Si) layers have been deposited by molecular beam epitaxy on double-layer porous silicon (PSi). We investigate the structure and morphology of double-layer PSi as fabricated and after annealing at high temperature. We show that a top thin layer with a low porosity is used as a seed layer for epitaxial growth. While, the underlying higher porosity layer is used as an easily detectable etch stop layer. The morphology and structure of epitaxial Si layer grown on the double-layer PSi are investigated by transmission electron microscopy and high resolution X-ray diffraction. The results show that, an epitaxial Si layer with a low defect density can be grown. Epitaxial growth of thin crystalline layers on double-layer PSi can provide opportunities for silicon-on-insulator applications and Si-based solar cells provided that the epitaxial layer has a sufficient crystallographic quality
Soraya G, amdane Mahamdi R, Escoubas S, Favre L, Aouassa M, Ronda A, Berezier I. Microstructure and crystallinity of epitaxial silicon layer fabricated on double porous siliconcs, ISSN / e-ISSN 2090-1232 / 2090-1224. Journal of A dvanced Research in PhysicsJournal of A dvanced Research in Physics. 2016;Volume 6 :pp 021607.Abstract
Single crystal Silicon (Si) layers have been deposited by molecular beam epitaxy on double-layer porous silicon (PSi). We investigate the structure and morphology of double-layer PSi as fabricated and after annealing at high temperature. We show that a top thin layer with a low porosity is used as a seed layer for epitaxial growth. While, the underlying higher porosity layer is used as an easily detectable etch stop layer. The morphology and structure of epitaxial Si layer grown on the double-layer PSi are investigated by transmission electron microscopy and high resolution X-ray diffraction. The results show that, an epitaxial Si layer with a low defect density can be grown. Epitaxial growth of thin crystalline layers on double-layer PSi can provide opportunities for silicon-on-insulator applications and Si-based solar cells provided that the epitaxial layer has a sufficient crystallographic quality.
Soraya G, amdane Mahamdi R, Escoubas S, Favre L, Aouassa M, Ronda A, Berezier I. Microstructure and crystallinity of epitaxial silicon layer fabricated on double porous siliconcs, ISSN / e-ISSN 2090-1232 / 2090-1224. Journal of A dvanced Research in PhysicsJournal of A dvanced Research in Physics. 2016;Volume 6 :pp 021607.Abstract
Single crystal Silicon (Si) layers have been deposited by molecular beam epitaxy on double-layer porous silicon (PSi). We investigate the structure and morphology of double-layer PSi as fabricated and after annealing at high temperature. We show that a top thin layer with a low porosity is used as a seed layer for epitaxial growth. While, the underlying higher porosity layer is used as an easily detectable etch stop layer. The morphology and structure of epitaxial Si layer grown on the double-layer PSi are investigated by transmission electron microscopy and high resolution X-ray diffraction. The results show that, an epitaxial Si layer with a low defect density can be grown. Epitaxial growth of thin crystalline layers on double-layer PSi can provide opportunities for silicon-on-insulator applications and Si-based solar cells provided that the epitaxial layer has a sufficient crystallographic quality.
Soraya G, Ramdane M, Stephanie E, Luc F, Mansour A, Aantoine R, Isabelle B. Microstructure and crystallinity of epitaxial silicon layer fabricated on double porous silicon, ISSN 2069-7201. Journal of Advanced Research in PhysicsJournal of Advanced Research in Physics. 2016;volume 6 :pp 021607.Abstract
Single crystal Silicon (Si) layers have been deposited by molecular beam epitaxy on double-layer porous silicon (PSi). We investigate the structure and morphology of double-layer PSi as fabricated and after annealing at high temperature. We show that a top thin layer with a low porosity is used as a seed layer for epitaxial growth. While, the underlying higher porosity layer is used as an easily detectable etch stop layer. The morphology and structure of epitaxial Si layer grown on the double-layer PSi are investigated by transmission electron microscopy and high resolution X-ray diffraction. The results show that, an epitaxial Si layer with a low defect density can be grown. Epitaxial growth of thin crystalline layers on double-layer PSi can provide opportunities for silicon-on-insulator applications and Si-based solar cells provided that the epitaxial layer has a sufficient crystallographic quality
Soraya G, amdane Mahamdi R, Escoubas S, Favre L, Aouassa M, Ronda A, Berezier I. Microstructure and crystallinity of epitaxial silicon layer fabricated on double porous siliconcs, ISSN / e-ISSN 2090-1232 / 2090-1224. Journal of A dvanced Research in PhysicsJournal of A dvanced Research in Physics. 2016;Volume 6 :pp 021607.Abstract
Single crystal Silicon (Si) layers have been deposited by molecular beam epitaxy on double-layer porous silicon (PSi). We investigate the structure and morphology of double-layer PSi as fabricated and after annealing at high temperature. We show that a top thin layer with a low porosity is used as a seed layer for epitaxial growth. While, the underlying higher porosity layer is used as an easily detectable etch stop layer. The morphology and structure of epitaxial Si layer grown on the double-layer PSi are investigated by transmission electron microscopy and high resolution X-ray diffraction. The results show that, an epitaxial Si layer with a low defect density can be grown. Epitaxial growth of thin crystalline layers on double-layer PSi can provide opportunities for silicon-on-insulator applications and Si-based solar cells provided that the epitaxial layer has a sufficient crystallographic quality.
Soraya G, amdane Mahamdi R, Escoubas S, Favre L, Aouassa M, Ronda A, Berezier I. Microstructure and crystallinity of epitaxial silicon layer fabricated on double porous siliconcs, ISSN / e-ISSN 2090-1232 / 2090-1224. Journal of A dvanced Research in PhysicsJournal of A dvanced Research in Physics. 2016;Volume 6 :pp 021607.Abstract
Single crystal Silicon (Si) layers have been deposited by molecular beam epitaxy on double-layer porous silicon (PSi). We investigate the structure and morphology of double-layer PSi as fabricated and after annealing at high temperature. We show that a top thin layer with a low porosity is used as a seed layer for epitaxial growth. While, the underlying higher porosity layer is used as an easily detectable etch stop layer. The morphology and structure of epitaxial Si layer grown on the double-layer PSi are investigated by transmission electron microscopy and high resolution X-ray diffraction. The results show that, an epitaxial Si layer with a low defect density can be grown. Epitaxial growth of thin crystalline layers on double-layer PSi can provide opportunities for silicon-on-insulator applications and Si-based solar cells provided that the epitaxial layer has a sufficient crystallographic quality.

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