DJEFFAL F, Bentrcia T, Abdi MA, Bendib T.
Drain current model for undoped Gate Stack Double Gate (GSDG) MOSFETs including the hot-carrier degradation effects. Microelectronics ReliabilityMicroelectronics Reliability. 2011;51 :550-555.
DJEFFAL F, Bentrcia T, Abdi MA, Bendib T.
Drain current model for undoped Gate Stack Double Gate (GSDG) MOSFETs including the hot-carrier degradation effects. Microelectronics ReliabilityMicroelectronics Reliability. 2011;51 :550-555.
DJEFFAL F, Bentrcia T, Abdi MA, Bendib T.
Drain current model for undoped Gate Stack Double Gate (GSDG) MOSFETs including the hot-carrier degradation effects. Microelectronics ReliabilityMicroelectronics Reliability. 2011;51 :550-555.
DJEFFAL F, Bentrcia T, Abdi MA, Bendib T.
Drain current model for undoped Gate Stack Double Gate (GSDG) MOSFETs including the hot-carrier degradation effects. Microelectronics ReliabilityMicroelectronics Reliability. 2011;51 :550-555.
BENKOUDA S, Amir M, FORTAKI T, Benghalia A.
Dual-frequency behavior of stacked high T c superconducting microstrip patches. Journal of Infrared, Millimeter, and Terahertz WavesJournal of Infrared, Millimeter, and Terahertz Waves. 2011;32 :1350-1366.
BENKOUDA S, Amir M, FORTAKI T, Benghalia A.
Dual-frequency behavior of stacked high T c superconducting microstrip patches. Journal of Infrared, Millimeter, and Terahertz WavesJournal of Infrared, Millimeter, and Terahertz Waves. 2011;32 :1350-1366.