Boron diffusion and activation during heat treatment in heavily doped polysilicon thin films for P+ metal-oxide-semiconductor transistors gates

Citation:

Mahamdi R, Mansour F, Scheid E, Boyer PT, Jalabert L. Boron diffusion and activation during heat treatment in heavily doped polysilicon thin films for P+ metal-oxide-semiconductor transistors gates. Japanese journal of applied physicsJapanese Journal of Applied Physics. 2001;40 :6723.

Date Published:

2001

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