Continuous analytic I—V model for GS DG MOSFETs including hot-carrier degradation effects

Citation:

Bentrcia T, Djeffal F, Benhaya A. Continuous analytic I—V model for GS DG MOSFETs including hot-carrier degradation effects. Journal of SemiconductorsJournal of Semiconductors. 2012;33 :014001.

Date Published:

2012

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