Date Published:

Abstract:

In this work, an inverted PTB7:PC₇₀BM bulk heterojunction solar cells with the configuration of ITO/ZnO/ PTB7:PC₇₀BM / HTMs/Ag for various inorganic materials as a hole transport layer (ZnO, MoO₃, NiO, PEDOT: PSS, V₂O₅ and Cu₂O) are simulated by using the GPVDM software which is a free general-purpose tool for the simulation of opto-electronic devices. The influence of the thickness of both PTB7:PC₇₀BM and HTMs layers on the performance of the solar cell are investigated. The obtained results indicated that on regardless on the type of the inorganic material constituted the Hole Transport Material (HTM), the solar cell parameters can be improved by reducing the HTM thickness while the active layer optimum thickness is around 90 nm. The performance of the device with all inorganic materials used as HTM reaches the same levels as the PEDOT/PSS for the lower thickness (10 nm). As the thickness is increased, the electrical parameters are significantly enhanced by inserting cuprous oxide (Cu₂O) compared to the conventional PEDOT: PSS.

Publisher's Version