A new dual‐material (DM) gate design to improve the subthreshold behavior of deep submicron GaN‐MESFETs

Citation:

Lakhdar N, DJEFFAL F, Dibi Z. A new dual‐material (DM) gate design to improve the subthreshold behavior of deep submicron GaN‐MESFETs. physica status solidi cphysica status solidi c. 2012;9 :1109-1113.

Date Published:

2012

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