Numerical investigation of nanoscale double‐gate junctionless MOSFET with drain and source extensions including interfacial defects

Citation:

Bentrcia T, DJEFFAL F, Arar D, Meguellati M. Numerical investigation of nanoscale double‐gate junctionless MOSFET with drain and source extensions including interfacial defects. physica status solidi (c)physica status solidi (c). 2016;13 :151-155.

Date Published:

2016

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