The cartography of the vulnerability in the pollution of subterranean waters allows identifying zones with high risk of contamination who takes into account the major part of the hydrogeological factors which allocate and control the Mansouri Z.& al. / Larhyss Journal, 26(2016), 237-247238flow of subterranean waters: the depth of the water, the refill.These factors are represented by weights and quotations which depend respectively on their relative importance and on local hydrogeological conditions.The overall of the weights and the quotations of the diverse parameters and in a numerical value which is the indication Drastic. The cartography of the indication of vulnerability bases on the overlapping of 7 indexed cards.

Single crystal Silicon (Si) layers have been deposited by molecular beam epitaxy on double-layer porous silicon (PSi). We investigate the structure and morphology of double-layer PSi as fabricated and after annealing at high temperature. We show that a top thin layer with a low porosity is used as a seed layer for epitaxial growth. While, the underlying higher porosity layer is used as an easily detectable etch stop layer. The morphology and structure of epitaxial Si layer grown on the double-layer PSi are investigated by transmission electron microscopy and high resolution X-ray diffraction. The results show that, an epitaxial Si layer with a low defect density can be grown. Epitaxial growth of thin crystalline layers on double-layer PSi can provide opportunities for silicon-on-insulator applications and Si-based solar cells provided that the epitaxial layer has a sufficient crystallographic quality.