New optimized Dual-Material (DM) gate design to improve the submicron GaN-MESFETs reliability in subthreshold regime

Citation:

Lakhdar N, DJEFFAL F. New optimized Dual-Material (DM) gate design to improve the submicron GaN-MESFETs reliability in subthreshold regime. Microelectronics ReliabilityMicroelectronics Reliability. 2012;52 :958-963.

Date Published:

2012

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