Temperature and SiO 2/4H-SiC interface trap effects on the electrical characteristics of low breakdown voltage MOSFETs

Citation:

Bencherif H, Dehimi L, Pezzimenti F, Della Corte FG. Temperature and SiO 2/4H-SiC interface trap effects on the electrical characteristics of low breakdown voltage MOSFETs. Applied Physics A. 2019;125 (5) :294.

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