Le bassin d’Ain Djasser fait partie de l’ensemble Sud-Sétifien. Ce dernier est représenté par une plaine inter-montagneuse appartenant au bassin des hauts plateaux constantinois. Il est caractérisé par un climat de type méditerranéen. L’hydrologie tributaire du relief est la conséquence directe des eaux de surface et de la fonte des neiges. La synthèse géologique montre un domaine allochtone résultant d’une histoire polyphasée associant les tectoniques atlasique et alpine. Ce dernier est caractérisé par des séries sédimentaires carbonatées colmaté par d’abondantes formations terrigènes. L’alimentation de l’eau souterraine des différentes nappes profondes à semi-profondes provient essentiellement de l’infiltration des eaux de pluies. Ce cortège de roche forme une nappe libre et captive, par endroit recoupée par des forages à des profondeurs de 178 à 330 m, fournissant un débit moyen de 15 l/s. L’interprétation des coupes géoélectriques du bassin montrent, (i) des formations alluvionnaires du mio-plio-quaternaire de quelques dizaines de mètres qui forment un bon aquifère superficiel, (ii) des calcaires fissurés du jurassico-crétacé dont le toit est atteint à des profondeurs variables est un aquifère captif. L’influence d’accidents entre les différents blocs rend possible une éventuelle alimentation des aquifères entres eux. L’analyse litho-stratigraphique montre que le substratum et la couverture sédimentaire ne présentent pas de grandes variations latérales. Par contre, nous observons au niveau des sondages une variation dans l’épaisseur et la lithologie des couches, essentiellement au niveau de la formation du remplissage mio-plio-quaternaire. L’objectif de cette étude réside pour l’essentiel, dans la mobilisation des ressources en eaux superficielles et souterraine pour leurs exploitations dans les domaines agricoles et l’élevage, en vue d’une utilisation rationnelle et planifiée de cet élément vital qu’est l’eau

In this work, thin films of aluminum doped ZnO (AZO) were deposited on ultrasonically cleaned glass substrates by sol-gel process using dip and spin coating techniques. For this purpose, Zinc acetate dihydrate, aluminum nitrate nonahydrate, ethanol and mono ethanolamine were employed as precursor, dopant, solvent and stabilizer, respectively. X-ray diffraction, UV–vis, photoluminescence, 4-point probe and Van der pauw techniques were investigated for the characterization of the prepared AZO thin films. X-ray-analysis revealed that all the prepared films have hexagonal wurtzite structure with a relative preferential orientation along the c-axis and the lattice parameters are close to the standard values reported in literature. UV–vis spectroscopy showed that the average value of the films’ transmittance in the visible region is found to be around 85% and the gap ranges in the interval [3.15 eV–3.30 eV]. The photoluminescence spectrum only showed the UV peak while the broad band of the visible region was completely vanished. The electrical measurements indicate that sol-gel methods provide relatively high resistivities compared to those obtained with physical vapor deposition (PVD) techniques.

A new equivalent model of the induction motor with turn to turn fault on one phase has been developed. This model has been used to establish two schemes to estimate the severity of the short circuit fault. In the first scheme, the faulty model is considered as an observer, where a correction of an error between the measured and the estimated currents is the kernel of the fault severity estimator. However, to develop the second method, the model was required only in the training process of an artificial neural network (ANN). Since stator faults have a signature on symmetrical components of phase currents, the magnitudes and angles of these components were used with the mean speed value as inputs of the ANN

In this paper, versatile Metal/TCO/p-Si Schottky Barrier Diodes (SBDs) with dissimilar TCO intermediate layers (ZnO and ITO) were fabricated by RF magnetron sputtering technique. An overall electrical performance comparison between the Al/ZnO/p-Si, Au/ITO/p-Si and the conventional Au/p-Si structures is carried out. The measured I-V characteristics indicate that the proposed Al/ZnO/p-Si design exhibits an outstanding capability for achieving a high rectifying ratio of 142 dB. This is mainly due to the enhanced Schottky barrier height (SBH) of 0.75 V and close to unite ideality factor (n = 1.23). Such behavior can be attributed to the enhanced interface quality achieved by introducing TCO inter-layers, which could decrease the Series resistance. A comparative study of the elaborated structures performance is carried out in which new Figures of Merit (FoM) parameters that combine both electrical and thermal stability performances are proposed. The Experimental results show that the proposed designs with ITO and ZnO sub-layers exhibits improved FoM parameters as compared to the conventional Au/p-Si structure. Moreover, this comparative study enables to the designer to acquire a comprehensive review about the Si-based SBDs design tradeoffs. It is demonstrated that the insertion of a TCO inter-layer might be beneficial for avoiding the degradation related-heating effects. Therefore, the proposed designs offer the possibility of bridging the gap between superior electrical performance and high thermal stability, which makes them suitable for developing high-performance Schottky solar cells and sensing applications.