In the last few years, an accelerated trend toward the miniaturization of nanoscale circuits has been recorded. In fact, this has been reflected by numerous enhancements at different levels of multi-gate structures such as the channel body or the gate material. Our aim in this work is to investigate the reliability performance of junctionless DG MOSFET including graded channel aspect. The behavior of the considered device is analyzed numerically using ATLAS-2D simulator, where degradation phenomena are accounted for in the model. The variation of some analog/RF criteria namely the transconductance and cut-off frequency are established in terms of the channel length and traps density. The obtained responses indicate the superior immunity of the graded channel device against traps-induced degradation in comparison to the conventional structure. Thus, this work can offer more insights regarding the benefit of adopting the channel doping engineering for future nanoscale electronic applications.

In this paper, new multilayer design based on ZnO/Ag/ZnO structure is proposed as a new way to achieve UV-based photodetector (PD) with superior optical behavior. Our purpose resides on reducing the refracting light and achieving an effective absorption in the Ag metallic sub-layers. New numerical model based on accurate solutions of Maxwell’s equations is developed in order to elucidate the impact of the metallic sub-layers on the UV-PD optical performance. An overall analysis regarding the optical parameters such as the integral absorption and the total reflection is conducted. It is found that the metallic sub-layers have profound implications on modulating the electric field in the structure and facilitating photon forward scattering in the ZnO sub-layers which led to better optical behavior. Moreover, Particle Swarm Optimization (PSO) approach is proposed as a metaheuristic technique to reach effectiveness absorption through carefully adjusting the Ag and ZnO sub-layers thickness. It is confirmed that the optimized design can provide superior optical performance as compared to the conventional counterpart, where the optimized multilayer design exhibits an enhancement of 60% in the integral absorption over ZnO-based PD. The obtained results make the proposed multilayer design efficient for providing high performance PDs for communication applications.

Recently, the Junctionless Double Gate MOSFET with source/drain extensions has proved competitive performance measures due to the reduction of the series resistance between the metal contacts and source/drain regions. However, the precise modeling of different response functions is still an important issue especially at nanoscale level because of the inclusion of complex phenomena such as quantum transport mechanisms and hot carrier degradation effect. In this perspective, our aim in the presented work is to investigate the efficiency of a novel approach based on Kriging metamodeling and multi-objective particle swarm optimization for the exploitation of the considered device in terms of some analog/RF performances. Data generated by ATLAS-2D simulator, are used to establish Kriging metamodels for the Gain and Transconductance Generation Factor. It is highlighted that the obtained models can be used accurately in a multi-objective context to offer several Pareto optimal configurations. As a result, a wide range of biasing configurations is available to the designer depending on imposed constraints.