Lynda SACI, Mahamdi R, Mansour F, Temple-Boyer P. Experimental study of the boron redistribution in two series of bilayer films silicon-based. IU-Journal of Electrical & Electronics EngineeringIU-Journal of Electrical & Electronics Engineering. 2012;12 :1453-1456.

Bouridah H, Bouaziz F, Mansour F, Mahamdi R, Temple-Boyer P. Study of grains size distribution and electrical activity of heavily boron doped polysilicon thin films. Materials science in semiconductor processingMaterials Science in Semiconductor Processing. 2011;14 :261-265.

Saci L, Mahamdi R, Mansour F, Boucher J, Collet M, Pereira EB, Temple-Boyer P. Study of nitrogen effect on the boron diffusion during heat treatment in polycrystalline silicon/nitrogen-doped silicon thin films. Japanese Journal of Applied PhysicsJapanese Journal of Applied Physics. 2011;50 :051301.

Bouridah H, Mansour F, Mahamdi R, Temple-Boyer P. Effect of Nitrogen on Boron doped Polysilicon Thin Films Properties. 2007 IEEE International Symposium on Industrial Electronics. 2007 :1346-1349.

Bouridah H, Mansour F, Mahamdi R, Temple-Boyer P. Study of electrical and structural properties of boron doped polysilicon films with a low nitrogen content. Journal of materials scienceJournal of materials science. 2005;40 :1405-1408.

Mansour F, Mahamdi R, Jalabert L, Temple-Boyer P. Boron diffusion into nitrogen doped silicon films for P+ polysilicon gate structures. Thin Solid FilmsThin Solid Films. 2003;434 :152-156.

Mahamdi R, Mansour F, Scheid E, Boyer PT, Jalabert L. Boron diffusion and activation during heat treatment in heavily doped polysilicon thin films for P+ metal-oxide-semiconductor transistors gates. Japanese journal of applied physicsJapanese Journal of Applied Physics. 2001;40 :6723.