Drain current model for undoped Gate Stack Double Gate (GSDG) MOSFETs including the hot-carrier degradation effects

Citation:

DJEFFAL F, Bentrcia T, Abdi MA, Bendib T. Drain current model for undoped Gate Stack Double Gate (GSDG) MOSFETs including the hot-carrier degradation effects. Microelectronics ReliabilityMicroelectronics Reliability. 2011;51 :550-555.

Date Published:

2011

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