L'objectif de c travail est d'évaluer les effets délétères du chrome hexavalent sur la fonction rénale chez la rate gestante.

The purpose of this paper is to present a simplified model of inductively coupled plasma (ICP). The study of the effect of parameters such as current and number of turns in the coil is simulated using Comsol Multiphysics 3.5 by applying the fluid dynamic models that are generally appropriate for the investigation of inductively coupled plasmas.

In this paper, we propose an algorithm for classification based on extreme learning machine, named TS-ELM (Two feature Spaces Extreme learning Machine). It is a hybridization of two distinct feature mapping of SLFNs (Single hidden layer feedforward neural network). Both are realized based on ELM theories. The first feature space resulted from a random kernel distributions of a randomly connected input samples, that inspired initially from conventional random connected neural network and it is also included in ELM theories. The second feature space that gives the training or testing samples is the result of a random probability distribution of fully connected samples taken from the first feature space, and adjusted with their own weight and threshold parameters. This algorithm was applied on three datasets of multiclass and binary classification, and the results shows that it has strong classification capabilities and universal approximation as well. The mechanisms of the algorithm and universal approximation are discussed in this paper.

The ENICAB company in Biskra uses the cold drawing process on several types of wires rod of different materials and grades. Our study was carried out on an Al-Mg-Si (AA6101) aluminum alloy wire rod, the most used by the ENICAB company in the manufacture of electrical energy transmission cables. The purpose of this work is to understand the evolution of the deformation texture and the stored energy in the grains during cold drawing of wire, as well as the combined influence of deformation and annealing at 400 °C during different holding time on recrystallization kinetics and evolution of local and global crystallographic texture. Characterization methods used in this work is: Optical Microscopy (OM), Scanning Electron Microscopy (SEM), Back Scatter Electron Diffraction (EBSD), X-ray diffraction, Neutron diffraction, Vickers microhardness and Chemical analysis by EDS.

In this paper, we present a comprehensive investigation the impact of various high-k gate materials on both breakdown voltage and drain current of a vertical 4H-SiC-based power MOSFET, operating in the quasi-saturation regime. The device electrical behavior is numerically investigated using a TCAD-based computation provided by ATLAS 2D simulator. Moreover, the performance parameters, governing the power MOSFET breakdown characteristics are extracted in order to reveal the role of the high-k gate materials in improving the transistor electrical performance. The effect of the dielectric permittivity on the derived current capability in also analyzed. After, we conduct a sensitivity analysis of the breakdown voltage with several high-k materials (Al2O3, HfSiO4, HfO2, and TiO2) and different dielectric thicknesses. It is found that the proposed power MOSFET design exhibits improved electrical behavior not only enables enhancing the drain current but also allows achieving superior breakdown performance as compared to the conventional design, making it suitable for high-performance power electronic applications.